Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1993-11-09
1994-09-06
Yoo, Do Hyun
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 257295, G11C 1122, G11C 1140
Patent
active
053454154
ABSTRACT:
Two memory cells are formed adjacent each other on a semiconductor substrate. In each memory cell, eight MOS transistors are formed between two selection transistors such that the MOS transistors and the selection transistors are connected in series, and that a source/drain diffusion layer is shared by adjacent ones of the selection transistors and the MOS transistors. A drain layer is shared by two adjacent selection transistors of the two memory cells. Ferroelectric capacitors are formed on the respective MOS transistors. A common electrode serves both as a gate electrode of the MOS transistor and a bottom electrode of the ferroelectric capacitor. Gate electrodes of the selection transistors, the common electrodes, and top electrodes of the ferroelectric capacitors are connected to word lines, and the above drain diffusion layer is connected to a bit line.
REFERENCES:
patent: 3691535 (1972-09-01), Williams
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5010518 (1991-04-01), Toda
patent: 5237533 (1993-08-01), Papaliolios
patent: 5262986 (1993-11-01), Yamauchi
Nakamura Takashi
Nakao Hironobu
Rohm & Co., Ltd.
Yoo Do Hyun
LandOfFree
Nonvolatile semiconductor memory utilizing a ferroelectric film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory utilizing a ferroelectric film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory utilizing a ferroelectric film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1334135