Static information storage and retrieval – Floating gate – Particular connection
Patent
1998-01-21
1999-11-09
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular connection
36518503, 36518522, G11C 1600
Patent
active
059826630
ABSTRACT:
The disclosed invention is a nonvolatile memory having a memory field and a redundant field within a single semiconductor chip. The redundant field is used to store essential information regarding device formulation or address mapping. The nonvolatile memory includes a programming circuit capable of programming and verifying a selected memory cell within the redundant field with single-bit data while a selected memory cell within the memory field is being programmed and verified with multi-bit data. The nonvolatile memory also includes a reading circuit capable of reading single-bit data from a selected memory cell within the redundant field while multi-bit data is being read from a selected memory cell within the memory field. Therefore, according to this invention a single-bit operation for the redundant field can be performed without disturbing a multi-bit operation for the memory field.
REFERENCES:
patent: 4780855 (1988-10-01), Iida et al.
patent: 4998233 (1991-03-01), Akaogi
patent: 5541886 (1996-07-01), Hasbun
patent: 5838610 (1998-11-01), Hashimoto
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
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