Nonvolatile semiconductor memory including two memory cell...

Details Nonvolatile semiconductor memory including two memory cell... Nonvolatile semiconductor memory including two memory cell...

2007-07-17

2007-07-17

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S319000

Reexamination Certificate

active

10892445

ABSTRACT:
This nonvolatile semiconductor memory includes: a first and a second memory cell column having memory cell transistors connected in series with a floating gate and a first and a second control gate located at both sides of that floating gate; a first select-gate transistor connected between the first memory cell column and a bit line; a second select-gate transistor connected between the second memory cell column and the bit line; and a third select gate transistor connected between the first memory cell column and a source line and also between the second memory cell column and the source line, respectively.

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U.S. Appl. No. 11/566,283, Dec. 4, 2006, Arai et al.
U.S. Appl. No. 11/550,636, Oct. 18, 2006, Arai et al.

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