Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-05-15
1996-07-30
Nuguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular biasing
36518901, 36518905, 365201, G11C 700
Patent
active
055418791
ABSTRACT:
A nonvolatile semiconductor memory device according to the present invention includes an array of cell units, each cell unit including at least one memory transistor which has a floating gate and a control gate, the array being divided into a plurality of memory blocks each having a certain number of cell units. The nonvolatile semiconductor memory device operates in a program mode, a program verify mode and a read mode. A current source provides a predetermined electrical current to the bit lines during both data reading and programming modes, and a common data latch stores program data during a write operation, as well as senses and stores data when the nonvolatile memory device is operated in a data read mode and a program verify mode.
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Choi Jeong H.
Kim Jin K.
Suh Kang D.
Nuguyen Tan T.
Samsung Electronics Co,. Ltd.
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