Nonvolatile semiconductor memory having a charge...

Details Nonvolatile semiconductor memory having a charge... Nonvolatile semiconductor memory having a charge...

2007-11-13

2007-11-13

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S296000, C257S318000

Reexamination Certificate

active

11047814

ABSTRACT:
At least either above or below a memory transistor formed on an insulating substrate, a shielding layer which has an area larger than that of the semiconductor layer of the memory transistor and has either an electromagnetic wave shielding effect or a light shielding effect or both of these is provided, and by this shielding layer, electromagnetic waves or light is prevented from entering the semiconductor layer. Or, the regional area of at least one of the gate and the charge accumulation layer of the memory transistor is made larger than the semiconductor layer to prevent electromagnetic waves or light from entering the semiconductor layer by the gate or the charge accumulation layer.

REFERENCES:
patent: 5321286 (1994-06-01), Koyama et al.
patent: 6525379 (2003-02-01), Nomoto et al.
patent: 6781178 (2004-08-01), Shizukuishi
patent: 2002/0025429 (2002-02-01), Fukui et al.
patent: 2004/0108543 (2004-06-01), Yamazaki et al.
patent: 11-87545 (1999-03-01), None

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