Nonvolatile semiconductor memory formed with silicon-on-insulato

Details Nonvolatile semiconductor memory formed with silicon-on-insulato Nonvolatile semiconductor memory formed with silicon-on-insulato

1995-10-24

1997-11-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257320, 257321, 257322, 257324, 36518501, 36518502, 36518517, 365104, 365149, H01L 29788, G11C 1134

Patent

active

056915527

ABSTRACT:
The invention provides an electrically erasable and programmable nonvolatile memory having a plurality of memory cells (M1 to M8) connected in series to each other to form a NAND type flash memory array. Each of the memory cells is constructed of a floating gate, a control gate, a source region, a drain region and a channel region. Each of the memory cells is formed in a semiconductor film (3a) formed on an insulating substrate. Further, a plurality of control transistors (T1 to T8) for transmitting a voltage applied to one end of NAND array to a selected memory cell in the selective writing mode are formed of a side wall of the semiconductor film. Each of the control transistors is connected in parallel to an associated one of the memory cells.

REFERENCES:
patent: 5493140 (1996-02-01), Iguchi

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