Nonvolatile semiconductor memory devices and the fabrication...

Details Nonvolatile semiconductor memory devices and the fabrication... Nonvolatile semiconductor memory devices and the fabrication...

2006-04-04

2006-04-04

Wilson, Christian D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000

Reexamination Certificate

active

07023048

ABSTRACT:
The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of a control gate material, an interpoly dielectric film material, and a floating gate material, the difficulties accompanying a reduction in word line width. Further, the invention enables to avoid damage caused in the batch forming on a gate oxide film. Before forming floating gates of memory cells of a nonvolatile memory, a space enclosed by insulating layers is formed for each of the floating gates of the memory cells, so that the floating gate is buried in the space. This structure is realized by processing the floating gates in a self alignment manner after depositing the floating gate material. Therefore, it is unnecessary to perform the batch forming of the control gate material, the interpoly dielectric film material, and the floating gate material in the case of processing the control gates, thereby ensuring adequate interpoly dielectric film capacitance.

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Kume, Flash Memory technology, Applied Physics 65 (Japan Society of Applied Physics, Nov. 1996) 1114.

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