Nonvolatile semiconductor memory devices and methods of...

Details Nonvolatile semiconductor memory devices and methods of... Nonvolatile semiconductor memory devices and methods of...

2007-07-24

2007-07-24

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257SE21640, C438S201000, C438S265000

Reexamination Certificate

active

11023314

ABSTRACT:
Nonvolatile semiconductor memory devices and methods of manufacturing the same are disclosed. A disclosed nonvolatile semiconductor memory cell includes a semiconductor substrate; first and second semiconductor cells positioned on the semiconductor substrate at a distance from each other; a first source and a second source adjacent the first and second semiconductor cells; a first drain contact between the first and second semiconductor cells; first and second cap dielectrics formed on the first and second semiconductor cells, respectively; first and second sidewall spacers formed on sidewalls of the first and second semiconductor cells, respectively; an inter metal dielectric layer covering the first and second cap dielectrics and the first and second sidewall spacers, a drain contact hole exposing the drain; and a second drain contact connected to the first drain contact through the drain contact hole.

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patent: 2002/0153546 (2002-10-01), Verhaar
patent: 2004/0079984 (2004-04-01), Kao et al.

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