Nonvolatile semiconductor memory devices

Details Nonvolatile semiconductor memory devices Nonvolatile semiconductor memory devices

2006-07-13

2009-02-17

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185210, C365S185250, C365S185260, C365S185330

Reexamination Certificate

active

07492637

ABSTRACT:
A nonvolatile semiconductor memory device may include a cell array and a program modulation unit. The cell array may further include a plurality of word lines, a plurality of bit lines, a plurality of cell transistors and a plurality of source lines. The plurality of bit lines may intersect the plurality of word lines. The plurality of cell transistors may be arranged at intersections of the word lines and bit lines, and may have drains and gates connected to the bit lines and the word lines, respectively. The source lines may be connected to sources of the plurality of cell transistors. The program-voltage modulation unit may modulate a program voltage based on a number of cell transistors selected for programming.

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