Nonvolatile semiconductor memory device with write protect data

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

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711166, 36518504, 36518529, G06F 1208

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active

06000004&

ABSTRACT:
A nonvolatile semiconductor memory device including: a memory cell array for storing data therein in a nonvolatile manner; block protect data storage regions provided for the respective blocks, for storing data therein in a nonvolatile manner; and block protect means for disabling an erase and a write of data from/into a block, if block protect data has been stored in the block protect data storage region of the block and a write protect signal has been activated. The device is characterized by: erase complete data storage regions, provided for the respective blocks, for storing data therein in a nonvolatile manner; erase complete data set means for writing erase complete data into the erase complete data storage region of a block after an erase of data from the block has been completed; and re-erase enable means for enabling an erase of data from a block if the erase complete data has not been stored in the erase complete data storage region of the block, irrespective of a function of the block protect means.

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