Nonvolatile semiconductor memory device with stable...

Details Nonvolatile semiconductor memory device with stable... Nonvolatile semiconductor memory device with stable...

2005-08-16

2005-08-16

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000, C257S904000

Reexamination Certificate

active

06930344

ABSTRACT:
A nonvolatile semiconductor memory device includes a substrate, a plurality of transistors formed on the substrate to constitute a latch, a plate line, and a pair of capacitors each including a lower electrode, a ferroelectric film, and an upper electrode, the pair of capacitors being provided in a layer situated above the substrate and below a metal wiring layer in which the plate line is formed.

REFERENCES:
patent: 5051951 (1991-09-01), Maly et al.
patent: 5406107 (1995-04-01), Yamaguchi
patent: 5757031 (1998-05-01), Natsume
patent: 6130470 (2000-10-01), Selcuk
patent: 2004/0166596 (2004-08-01), Sashida et al.
Tohru Miwa et al.; IEEE 2000 Custom Integrated Circuits Conference, pp. 65-68, May 2000.

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