Nonvolatile semiconductor memory device with stabilized data wri

Details Nonvolatile semiconductor memory device with stabilized data wri Nonvolatile semiconductor memory device with stabilized data wri

1988-07-27

1991-04-23

Bowler, Alyssa H.

Static information storage and retrieval

Systems using particular element

Semiconductive

365182, 365185, 365148, G11C 1134, G11C 1140, G11C 11412, G11C 1712

Patent

active

050105205

ABSTRACT:
In a nonvolatile semiconductor memory device, a wiring layer is connected between a power source and a memory cell. Resistance of the wiring layer is larger than the on-resistance of a load transistor, so that the load transistor substantially determines the load characteristic. Therefore, the load characteristic curve is more gentle in inclination and more rectilinear in shape. This makes the data writing operation stable against a variance in the channel lengths of manufactured transistors forming the memory cells.

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