Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2006-09-26
2006-09-26
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S185110
Reexamination Certificate
active
07113425
ABSTRACT:
A nonvolatile memory device includes a bit line, a pair of data lines and a plurality of scalable two transistor memory (STTM) cells. The memory cells are arranged between a pair of datalines so as to share the bit line. The memory device further includes a data line selection circuit and a sense amplification circuit. The data line selection circuit selects one of a pair of data lines, and the sense amplification circuit senses and amplifies a voltage difference between the bit line and the selected data line. Operation speed is increased, while improving device cell array structure.
REFERENCES:
patent: 5896327 (1999-04-01), Yang
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 6710465 (2004-03-01), Song et al.
patent: 6757196 (2004-06-01), Tsao et al.
patent: 6831860 (2004-12-01), Lee et al.
patent: 6882561 (2005-04-01), Kwon et al.
Cho Woo-Yeong
Choi Byung-Gil
Marger & Johnson & McCollom, P.C.
Tran Anthan
Zarabian Amir
LandOfFree
Nonvolatile semiconductor memory device with scalable two... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device with scalable two..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device with scalable two... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3557830