Nonvolatile semiconductor memory device with redundancy circuit

Details Nonvolatile semiconductor memory device with redundancy circuit Nonvolatile semiconductor memory device with redundancy circuit

1992-12-03

1994-07-12

Sikes, William L.

Static information storage and retrieval

Read/write circuit

Bad bit

36518908, 36523003, G11C 1140, G11C 502

Patent

active

053294882

ABSTRACT:
A nonvolatile semiconductor memory device for use as a flash EEPROM includes a plurality of sectors each comprising a plurality of main memory cell regions each composed of a matrix of nonvolatile memory cells and at least one redundant memory cell region composed of a matrix of nonvolatile memory cells. When one of said nonvolatile memory cells in any one of the sectors is found defective and is selected by addressing, it is replaced with one of the nonvolatile memory cells in the redundant memory cell region.

REFERENCES:
patent: 4365319 (1982-12-01), Takemae
patent: 4547867 (1985-10-01), Reese
patent: 4727516 (1988-02-01), Yoshida
patent: 4881200 (1989-11-01), Urai
patent: 4885720 (1989-12-01), Miller
patent: 5278794 (1994-01-01), Tanaka
IBM Technical Disclosure Bulletin vol. 19 No. 5 Oct. 1976.

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