Nonvolatile semiconductor memory device with memory cell...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S314000, C257S316000, C257SE29300

Reexamination Certificate

active

07863668

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a memory cell region provided on the semiconductor substrate, a word line provided on the memory cell region, a first gate insulating film provided in the memory cell region beneath the word line, a first floating gate electrode provided on the first gate insulating film, a second gate insulating film provided in the memory cell region beneath the word line, the second gate insulating film being different from the first gate insulating film in thickness, and a second floating gate electrode provided on the second gate insulating film.

REFERENCES:
patent: 5742670 (1998-04-01), Bennett
patent: 5946230 (1999-08-01), Shimizu et al.
patent: 2004/0047217 (2004-03-01), Kamiya
patent: 2004/0145020 (2004-07-01), Kang et al.
patent: 2005/0035397 (2005-02-01), Otoi et al.
patent: 2005/0041477 (2005-02-01), Lee et al.
patent: 2005/0237842 (2005-10-01), Takeuchi et al.
patent: 11-097652 (1999-04-01), None
patent: 2002-359308 (2002-12-01), None
patent: 2004-111917 (2004-04-01), None
Notice of-Reasons for Rejection-mailed Feb. 16, 2010 by Japanese Patent Office in Japanese counterpart application No. 2005-171306.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile semiconductor memory device with memory cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device with memory cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device with memory cell... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2639207

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.