Nonvolatile semiconductor memory device with floating gate...

Details Nonvolatile semiconductor memory device with floating gate... Nonvolatile semiconductor memory device with floating gate...

2007-03-06

2007-03-06

Pizarro-Crespo, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10230369

ABSTRACT:
A nonvolatile semiconductor memory device has a cell which includes a drain diffusion region and a source diffusion region formed on a surface layer of a semiconductor substrate; a first insulating film formed between the source diffusion region and the drain diffusion region; a floating gate formed on the first insulating film; a second insulating film formed on the floating gate; a first control gate formed on the second insulating film; a third insulating film formed on the first control gate and a sidewall thereof and on a sidewall of the floating gate; and a second control gate formed on the first control gate with the third insulating film interposed therebetween.

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Wolf; Silicon Processing for the VLSI Era vol. 3 : The Submicron MOSFET; 1995; Lattice Press, Sunset Beach, California; pp. 135-136.

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