Nonvolatile semiconductor memory device with a row decoder circu

Details Nonvolatile semiconductor memory device with a row decoder circu Nonvolatile semiconductor memory device with a row decoder circu

1998-07-28

2000-03-28

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518511, G11C 1606

Patent

active

060440201

ABSTRACT:
A nonvolatile semiconductor memory device which comprises a memory cell array having a plurality of memory blocks each divided into a plurality of segments, each of which has a plurality of word lines, a plurality of bit lines arranged to intersect the word lines, and a plurality of memory cells connected to the word lines and the bit lines. The device has means for decoding segment select signals to generate a decode signal that selects one of the segments, and means connected to a first power node, for receiving word line select signals to select one of the word lines in the selected segment to output a first voltage applied to the first power node. In the nonvolatile semiconductor memory device, furthermore, a word line driver, which is connected to a second power node, applies the first voltage to the selected word line during read, write, and test modes of operation, and applies a second voltage supplied to the second power node to the selected word line during an erase mode of operation, in response to the decoded signal from the decoding means.

REFERENCES:
patent: 5619450 (1997-04-01), Takeguchi

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