Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2008-07-08
2008-07-08
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S189070, C365S189080, C365S189090, C365S210130, C365S210150
Reexamination Certificate
active
11401286
ABSTRACT:
A reference current generating circuit generates at least one reference current. A voltage generating circuit generates voltage. A sense amplifier compares a current caused to flow in a memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit. A control section is supplied with an output signal of the sense amplifier. When verifying the threshold voltage of the memory cell, the control section causes the voltage generating circuit to generate verify voltage which is the same as readout voltage generated at the time of data readout from the memory cell.
REFERENCES:
patent: 5532962 (1996-07-01), Auclair et al.
patent: 5754475 (1998-05-01), Bill et al.
patent: 5768191 (1998-06-01), Choi et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6275419 (2001-08-01), Guterman et al.
patent: 6351416 (2002-02-01), Fuchigami et al.
patent: 6493266 (2002-12-01), Yachareni et al.
patent: 6618297 (2003-09-01), Manea
patent: 6639837 (2003-10-01), Takano et al.
patent: 6650570 (2003-11-01), Tanzawa et al.
patent: 6816413 (2004-11-01), Tanzawa
patent: 6842378 (2005-01-01), Chang
patent: 6856546 (2005-02-01), Guterman et al.
patent: 6912150 (2005-06-01), Portman et al.
patent: 6930922 (2005-08-01), Mori et al.
patent: 6937522 (2005-08-01), Funaki et al.
patent: 6947326 (2005-09-01), Torii
patent: 7071771 (2006-07-01), Takano et al.
patent: 7075844 (2006-07-01), Pagliato et al.
patent: 2001-325795 (2001-11-01), None
B. Pathak, et al., “1.8V 64Mb 100MHz Flexible Read While Write Flash Memory”, 2001 IEEE International Solid-State Circuits Conference, Session 2, Non-Volatile Memories, 2.3, Feb. 5, 2001, 3 Pages.
Honda Yasuhiko
Kuriyama Masao
Kabushiki Kaisha Toshiba
Nguyen Viet Q
LandOfFree
Nonvolatile semiconductor memory device which stores... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device which stores..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device which stores... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3929968