Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-09-04
2007-09-04
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189110
Reexamination Certificate
active
11242895
ABSTRACT:
A semiconductor device includes memory cells and a driver. Each memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a floating gate, and a selector gate transistor which has one end of a current path connected to the other end of the current path of the cell transistor and the other end of the current path connected to a source line. The driver is configured to selectively drive the memory cells, and in read, apply, to a source line connected to a memory cell subjected to read, a potential of a sign opposite to that of a potential applied to the gate of the selector gate transistor in the memory cell to read.
REFERENCES:
patent: 5555204 (1996-09-01), Endoh et al.
patent: 6097636 (2000-08-01), Nojima
patent: 6667907 (2003-12-01), Chaya et al.
patent: 6771544 (2004-08-01), Yoshida
patent: 7-73688 (1995-03-01), None
Kabushiki Kaisha Toshiba
Le Vu A.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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