Nonvolatile semiconductor memory device using trench isolation a

Details Nonvolatile semiconductor memory device using trench isolation a Nonvolatile semiconductor memory device using trench isolation a

1997-12-01

2000-03-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257506, 257510, H01L 29788

Patent

active

060343931

ABSTRACT:
A nonvolatile semiconductor memory device with trench isolation having sufficient capability of isolating memory cells is provided. A trench formed as a line in the main surface of semiconductor substrate is filled with a first insulating film. On semiconductor substrate on both sides of trench, a first gate electrode is provided with a first oxide film interposed. On the first gate electrode, a second gate electrode is provided with a second insulating film interposed. An angle formed by a side wall upper surface of trench and the surface of semiconductor substrate is smaller than 90.degree..

REFERENCES:
patent: 5559048 (1996-09-01), Inoue
patent: 5844270 (1998-12-01), Kim et al.
"A Novel Side-Wall Transfer-Transistor Cell (Swatt Cell) For . . . ", Seiichi Aritome, et al., IEDM 95, pp. 275-278.
"A Shallow-Trench-Isolation Flash Memory Technology with . . . ", Masataka Kato, et al., IEDM 96, pp. 177-180.

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