Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-10
2010-11-30
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07842993
ABSTRACT:
First and second memory cell transistors are isolated by an element isolation insulating film. A barrier insulating film covers the element isolation insulating film. The first memory cell transistor includes a first tunnel insulating film, a first charge storage layer made of an insulating film, a first block insulating film, and a first gate electrode. The second memory cell transistor includes a second tunnel insulating film, a second charge storage layer made of an insulating film, a second block insulating film, and a second gate electrode. The barrier insulating film is in contact with the first and second charge storage layers, and has a film thickness smaller than that of the first and second charge storage layers.
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Ha Nathan W
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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