Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2007-02-27
2007-02-27
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S210130
Reexamination Certificate
active
10843840
ABSTRACT:
A nonvolatile semiconductor memory device includes a first memory cell having a conductive
onconductive state thereof substantially controlled in response to data stored therein and providing passage of a first current amount in the conductive state, a first bit line connected to the first memory cell, a reference cell connected to the first bit line and providing passage of a second current amount smaller than the first current amount, a second bit line, a second memory cell connected to the second bit line and providing passage of the first current amount, and a sense amplifier connectable to the first bit line and the second bit line through electrical couplings.
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Klarquist Sparkman
Le Thong Q.
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