Nonvolatile semiconductor memory device operable in different wr

Details Nonvolatile semiconductor memory device operable in different wr Nonvolatile semiconductor memory device operable in different wr

1989-10-11

1991-10-29

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including signal comparison

365210, G11C 1100

Patent

active

050620789

ABSTRACT:
A nonvolatile semiconductor memory device has a memory circuit proper, a mode selector, and pulse generating circuits. The memory circuit proper includes a plurality of nonvolatile memory cells. The mode selector is capable of generating at least two mode signals. The mode selector detects a signal indicative of a specific operation applied to the memory circuit proper, and selects one of the mode signals in accordance with the detected signal. The pulse generating circuits generate a first and a second program pulses. Each pulse allows data to be written into the memory circuit proper in different manners in accordance with the mode signal selected by the mode selector.

REFERENCES:
patent: 4280197 (1981-07-01), Schlig
Memory Components Handbook, chapter 4 EPROMS (for example, attached is 27256) Intel (1987) pp. 4-55 to 4-66.
Data Book, X28C256 in section 3, E2PROM Data Sheets, Xicor (1986) pp. 3-75 to 3-83.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device operable in different wr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device operable in different wr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device operable in different wr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1404064