Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2010-06-01
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S319000, C257S321000, C257SE29129, C257SE29302
Reexamination Certificate
active
07728378
ABSTRACT:
A nonvolatile semiconductor memory device capable of improving injection efficiency and simplifying manufacturing process is provided. The device comprises a memory cell having second conductive type of first impurity diffusion area and second impurity diffusion area on a first conductive type of semiconductor substrate, between the first and second impurity diffusion areas, a first laminate section formed by laminating a first insulating film, a charge storage layer, a second insulating film and a first gate electrode in this order from the bottom, and a second laminate section formed by laminating a third insulating film and a second gate electrode in this order from the bottom, wherein an area sandwiched between the first and second laminate sections is the second conductive type of a third impurity diffusion area having impurity density lower than that of the first and second impurity diffusion areas and not higher than 5×1012ions/cm2.
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Ueda Naoki
Yamauchi Yoshimitsu
Morrison & Foerster / LLP
Ngo Ngan
Sharp Kabushiki Kaisha
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