Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000
Reexamination Certificate
active
06888194
ABSTRACT:
Nonvolatile memory elements are disclosed which can have increased capacity, reduced operating voltage and/or faster operating speeds. According to one embodiment, a nonvolatile memory element can include a first diffusion layer (2) and a second diffusion layer (3) formed in a main surface of a substrate (1). A laminate film can be formed near a first diffusion layer (2) and/or a second diffusion layers (3) that includes a first insulating film (4aor4), a second insulating film (5aor5), and a third insulating film (6aor6). A gate insulating film (7) can be formed a channel region and gate electrode (8) can be formed to cover gate insulating film (7) and the laminate film(s) that has a T-shape. A gate electrode (8) can have end portions that sandwich a first insulating film (4aor4), a second insulating film (5aor5), and a third insulating film (6aor6) with a first diffusion layer (2) and/or second diffusion layer (3).
REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 6798028 (2004-09-01), Horstmann et al.
patent: 6828618 (2004-12-01), Baker et al.
“Twin MONOS Cell with Dual Control Gates”,2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 122-123, by Yutaka Hayashi et al.
Hoang Quoc
NEC Electronics Corporation
Nelms David
Sako Bradley T.
Walker Darryl G.
LandOfFree
Nonvolatile semiconductor memory device, manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device, manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device, manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3366371