Nonvolatile semiconductor memory device including MOS...

Details Nonvolatile semiconductor memory device including MOS... Nonvolatile semiconductor memory device including MOS...

2005-09-13

2005-09-13

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S211000, C257S299000, C257S300000, C257S532000, C438S128000, C438S129000, C438S239000

Reexamination Certificate

active

06943402

ABSTRACT:
A nonvolatile semiconductor memory device includes memory cells including a first MOS transistor, and a boosting circuit including a capacitor element. The first MOS transistor includes a charge accumulation layer and a control gate formed on the charge accumulation layer with an inter-gate insulating film interposed therebetween. The capacitor element includes a first and a second semiconductor layers, a capacitor insulating film, and a third semiconductor layer. The first and second semiconductor layers are formed on a semiconductor substrate and separated from each other. The capacitor insulating film is formed on the top and side of each of the first and second semiconductor layers and on the semiconductor substrate between the first and second semiconductor layers and is made of the same material as that of the inter-gate insulating film. The third semiconductor layer is formed on the capacitor insulating film and is isolated electrically from the second semiconductor layer.

REFERENCES:
patent: 5757714 (1998-05-01), Choi et al.
patent: 5861648 (1999-01-01), Shinozaki
patent: 6583492 (2003-06-01), Otsuki
M. Togo et al., “Low-Leakage and Highly-Reliable 1.5nm SiON Gate-Dieletric Using Radical Oxynitridation for Sub-0.1μm CMOS”, Silicon Systems Research Labs., NEC.C (Japan), 2000 Symposium on VLSI Technology Digest of Technical Papers, 2000, pp. 116-117.
Wei-Hua Liu, et al., “A-2 Transistor Source-select (2TS) Flash EEPROM for 1.8V-Only Applications”, Semiconductor Technologies Laboratory, Motorola Inc., Austin, Texas, Non-Volatile Semiconductor Memory Workshops 4.1, 1997, pp. 1-3.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device including MOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device including MOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device including MOS... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3372879