Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-18
2006-07-18
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S319000
Reexamination Certificate
active
07078763
ABSTRACT:
A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.
REFERENCES:
patent: 5736443 (1998-04-01), Park et al.
patent: 6159796 (2000-12-01), Dietz et al.
patent: 6326661 (2001-12-01), Dormans et al.
patent: 6373095 (2002-04-01), Bracchitta et al.
patent: 6403494 (2002-06-01), Chu et al.
patent: 6567315 (2003-05-01), Takase et al.
patent: 6642103 (2003-11-01), Wils et al.
patent: 2004/0164340 (2004-08-01), Arai et al.
patent: 2004/0165443 (2004-08-01), Harari
patent: 11-145429 (1999-05-01), None
patent: 3073352 (2000-06-01), None
patent: 2000-223676 (2000-08-01), None
patent: 3147108 (2001-01-01), None
patent: 2002-26151 (2002-01-01), None
patent: 2002-50703 (2002-02-01), None
patent: 2002-217318 (2002-08-01), None
Y. Sasago, et al., “10 MB/s Mulit-Level programming of Gb-Scale Flash Memory Enabled by New AG-AND Cell Technology”, 2002 IEEE, pp. 952-954 IEDM, 21.6.1.
U.S. Appl. No. 07/244,854, filed Sep. 15, 1988, Unknown, (Abandoned).
U.S. Appl. No. 09/956,986, filed Sep. 21, 2001, Matsui et al., 93.
U.S. Appl. No. 09/984,718, filed Oct. 31, 2001, Ichige et al., 71-Capa.
U.S. Appl. No. 10/214,582, filed Aug. 9, 2002, Ichige et al., 61-Peripheral.
U.S. Appl. No. 10/382,772, filed Mar. 7, 2003, Arai et al., 71-FG.
U.S. Appl. No. 10/648,510, filed Aug. 27, 2003, Arai et al.
U.S. Appl. No. 10/940,844, filed Sep. 15, 2004, Sakuma et al.
U.S. Appl. No. 10/648,510, filed Aug. 27, 2003, Arai et al.
U.S. Appl. No. 10/944,940, filed Sep. 21, 2004, Sato et al.
Arai Fumitaka
Matsunaga Yasuhiko
Sakuma Makoto
Shimizu Akira
Shirota Riichiro
Ho Tu-Tu
Nelms David
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