Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-31
2007-07-31
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000, C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000
Reexamination Certificate
active
11154517
ABSTRACT:
A nonvolatile semiconductor memory device includes a substrate, a central structure, a second gate insulating film, a floating gate, and a control gate. The substrate has a trench. The central structure is formed so as to be embedded in the trench and protruded from the substrate. The second gate insulating film is formed on the substrate so as to be contact with the central structure. The floating gate is formed on the second gate insulating film. The control gate is formed so as to cover the floating gate through a insulating film;. The central structure includes an assistant gate and a first gate insulating film which is formed such that the assistance gate is surrounded with the first gate insulating film. The floating gate is formed in a side wall shape on the side surface of the central structure.
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McGinn IP Law Group PLLC
NEC Electronics Corporation
Soward Ida M.
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