Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Baumeister, William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S317000, C257SE21682, C257SE27103, C438S257000, C438S259000, C438S267000, C438S682000
Reexamination Certificate
active
10926043
ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array region including a plurality of NAND cells, each NAND cell having a plurality of memory cell transistors, and which are arranged in series, and a plurality of select transistors. A trench-type isolation region is formed between columns in the array of the NAND columns. The trench-type isolation region is formed in self-alignment with end portions of the channel region and a floating gate of the memory cell transistor, formed in self-alignment with the end portion of a channel region of the select transistor, and has a recess formed in at least the upper surface between the floating gates of the memory cell transistors.
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U.S. Appl. No. 11/411,804, filed Apr. 27, 2006, Naka.
Hazama Hiroaki
Iizuka Hirohisa
Kai Naoki
Anya Igwe U.
Baumeister William
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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