Nonvolatile semiconductor memory device having reference potenti

Details Nonvolatile semiconductor memory device having reference potenti Nonvolatile semiconductor memory device having reference potenti

1989-12-04

1990-11-27

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

36518909, G11C 1300

Patent

active

049742060

ABSTRACT:
A semiconductor memory device includes a memory cell transistor, a voltage switching circuit supplied with a first voltage for data readout and a second voltage for data write and selectively generating one of the first and second voltages in response to a write control signal, a first driving circuit supplied with an output from the voltage switching circuit and driving the gate of the memory cell transistor in response to a memory cell selection signal, a sense circuit for sensing data of the memory cell transistor by comparing a sense potential corresponding to data from the memory cell transistor with a reference potential, a reference cell transistor for generating the reference potential, and a second driving circuit supplied with the output from the voltage switching circuit and driving the gate of the reference cell transistor in response to the write control signal.

REFERENCES:
patent: 4843594 (1989-06-01), Tanaka et al.
patent: 4914634 (1990-04-01), Akrout et al.

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