Nonvolatile semiconductor memory device having parallel write an

Details Nonvolatile semiconductor memory device having parallel write an Nonvolatile semiconductor memory device having parallel write an

1994-01-13

1994-10-11

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

36518907, 365218, 365220, 36523006, G11C 700

Patent

active

053553349

ABSTRACT:
In a nonvolatile semiconductor memory device formed by nonvolatile memory cells connected to word lines and bit lines, one of the word lines is selected and driven by row address decoders, and one of the bit lines is selected and driven by column address decoders. An address degenerating circuit formed by NAND circuits, OR circuits or the like is interposed at a prestage of the row address decoders or the column address decoders, thus enabling a parallel write and read function.

REFERENCES:
patent: 4811294 (1989-03-01), Kobayashi et al.
patent: 4860260 (1989-08-01), Saito et al.
patent: 5111433 (1992-05-01), Miramoto
patent: 5267210 (1993-11-01), McClure et al.

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