Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257S392000, C257SE27081
Reexamination Certificate
active
11538944
ABSTRACT:
A non-volatile semiconductor memory device is disclosed, which comprises a memory cell unit including at least one memory cell transistor formed on a semiconductor substrate and having a laminated structure of a charge accumulation layer and a control gate layer, and a selection gate transistor one of the source/drain diffusion layer regions of which is connected to a bit line or a source line and the other of the source/drain diffusion layer regions of which is connected to the memory cell unit. The shape of the source diffusion layer region of the selection gate transistor is asymmetical to the shape of the drain diffusion layer region thereof below the selection gate transistor.
REFERENCES:
patent: 5293337 (1994-03-01), Aritome et al.
patent: 5949101 (1999-09-01), Aritome
patent: 6072721 (2000-06-01), Arase
patent: 6835978 (2004-12-01), Matsui et al.
patent: 6853029 (2005-02-01), Ichige et al.
patent: 10-209405 (1998-08-01), None
patent: 10-214494 (1998-08-01), None
patent: 11-67938 (1999-03-01), None
patent: 11-224909 (1999-08-01), None
patent: 2000-68487 (2000-03-01), None
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pizarro Marcos D.
LandOfFree
Nonvolatile semiconductor memory device having pair of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device having pair of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device having pair of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3782342