Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-08
2008-04-08
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C977S943000, C365S185010
Reexamination Certificate
active
07355238
ABSTRACT:
A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the source region and the drain region, a tunnel insulating film formed in contact with the channel-forming region, a charge retention layer formed adjacently to the tunnel insulating film, a gate insulating film formed adjacently to the charge retention layer, and a control gate formed adjacently to the gate insulating film. The charge retention layer includes an insulating matrix having, per nonvolatile semiconductor memory device, one conductive nano-particle which is made of at least one single-element substance or chemical compound that functions as a floating gate.
REFERENCES:
patent: 5714766 (1998-02-01), Chen et al.
patent: 5801401 (1998-09-01), Forbes
patent: 5852306 (1998-12-01), Forbes
patent: 6413819 (2002-07-01), Zafar et al.
patent: 6746893 (2004-06-01), Forbes et al.
patent: 6927136 (2005-08-01), Lung et al.
patent: 6936884 (2005-08-01), Chae et al.
patent: 7005697 (2006-02-01), Batra et al.
patent: 2003/0151948 (2003-08-01), Bhattacharyya
patent: 2005/0072989 (2005-04-01), Bawendi et al.
patent: 2005/0122775 (2005-06-01), Koyanagi et al.
patent: 11-186421 (1999-07-01), None
patent: 2003-51498 (2003-02-01), None
Koyanagi Mitsumasa
Takata Masaaki
Asahi Glass Company Limited
Jackson Jerome
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tohoku University
Valentine Jami M
LandOfFree
Nonvolatile semiconductor memory device having nanoparticles... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device having nanoparticles..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device having nanoparticles... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2760865