Nonvolatile semiconductor memory device having means for selecti

Electrical computers and digital processing systems: memory – Addressing combined with specific memory configuration or... – For multiple memory modules

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711103, 711154, 365218, 36523003, G06F 1206

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active

058901884

ABSTRACT:
A nonvolatile semiconductor memory device using a NAND-type EEPROM includes a memory unit, a management unit, an erasure unit, and a control unit. The memory unit has a memory cell array divided into blocks each constituting a minimum quantity of data that may be erased. The management unit manages unused blocks. The erasure unit discriminates a erased blocks of the unused blocks from a non-erased blocks of the unused blocks to erase data stored in the non-erased blocks. The control unit writes data into at least one block of the unused blocks managed by the management unit. In the control unit, when a content of the written data is obtained by changing data recorded in a different block of the memory unit, and the data recorded in the different block is not necessary, the management unit receives information that the different block is an unused block. When the data recorded in the different block is necessary, a necessary part of the data recorded in the different block is copied to a block in which new data is to be written.

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