Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S317000, C257SE29300, C257SE29129
Reexamination Certificate
active
07989871
ABSTRACT:
A nonvolatile semiconductor memory device includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate electrode, and a control gate electrode on the second insulating film. Each of the first and second insulating films comprises at least two layers, one layer directly in contact with the floating gate electrode is formed by an insulating material (A) including a metal element having a d orbital, and the other at least one layer is formed by an insulating material (B) chiefly including one of a metal element without the d orbital, and a semiconductor element.
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Bernstein Allison P
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phung Anh
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