Nonvolatile semiconductor memory device having grooves...

Details Nonvolatile semiconductor memory device having grooves... Nonvolatile semiconductor memory device having grooves...

2006-04-11

2006-04-11

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S324000

Reexamination Certificate

active

07026683

ABSTRACT:
A plurality of nonvolatile memory elements formed on element regions respectively isolated by element isolation regions on a main surface of a first conductive type semiconductor substrate, the nonvolatile semiconductor memory elements comprising a gate insulating film formed on the main surface of the semiconductor substrate, a plurality of floating electrodes formed along a first direction on the gate insulating film, a plurality of grooves formed among the plurality of floating electrodes, groove insulating films filled in the plurality of the grooves, a second conductive type impurity diffusion region formed along a second direction so as to sandwich the floating electrodes, interelectrode insulating films formed along the first direction on the plurality of floating electrodes and the groove insulating films, and control electrodes formed on the interelectrode insulating films.

REFERENCES:
patent: 4935378 (1990-06-01), Mori
patent: 5869858 (1999-02-01), Ozawa et al.
patent: 6680230 (2004-01-01), Arai et al.
patent: 63-252482 (1988-10-01), None
patent: 03-41987 (1991-06-01), None
patent: 5 304302 (1993-11-01), None
patent: 6-29553 (1994-02-01), None
patent: 11-260938 (1999-09-01), None
patent: 2001-110919 (2001-04-01), None
patent: 2002-16154 (2002-01-01), None
patent: 2002 270705 (2002-09-01), None
patent: 2002-533931 (2002-10-01), None
Notification of Reasons for Rejection dated May 10, 2005, issued by the Japanese Patent Office in counterpart Japanese Application No. 2003-107991 and English language translation thereof.
Decision of Rejection dated Dec. 6, 2005, issued by the Japanese Patent Office in counterpart Japanese Application No. 2003-107991, and English language translation thereof.

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