Nonvolatile semiconductor memory device having floating gate...

Details Nonvolatile semiconductor memory device having floating gate... Nonvolatile semiconductor memory device having floating gate...

2007-03-20

2010-11-30

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257SE29300

Reexamination Certificate

active

07842992

ABSTRACT:
It is an object to provide a nonvolatile semiconductor memory device with an excellent writing property and charge-retention property. A semiconductor layer including a channel forming region between a pair of impurity regions which are formed to be apart from each other is provided. In an upper layer portion thereof, a first insulating layer, a floating gate electrode, a second insulating layer, and a control gate electrode are provided. The floating gate has at least a two-layer structure, and a first layer being in contact with the first insulating layer preferably has a band gap smaller than that of the semiconductor layer. The stability of the first layer is improved by formation of a second layer of the floating gate electrode using a metal, an alloy, or a metal compound material. Such a structure of the floating gate electrode can improve injectability of carriers in writing and a charge-retention property.

REFERENCES:
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 5448513 (1995-09-01), Hu et al.
patent: 5808336 (1998-09-01), Miyawaki
patent: 6324101 (2001-11-01), Miyawaki
patent: 6417538 (2002-07-01), Choi
patent: 6498369 (2002-12-01), Yamazaki et al.
patent: 6518594 (2003-02-01), Nakajima et al.
patent: 6551948 (2003-04-01), Ohmi et al.
patent: 6597034 (2003-07-01), Yamazaki et al.
patent: 6613630 (2003-09-01), Lee
patent: 6699754 (2004-03-01), Huang
patent: 6713834 (2004-03-01), Mori et al.
patent: 6812086 (2004-11-01), Murthy et al.
patent: 6828623 (2004-12-01), Guo et al.
patent: 6861689 (2005-03-01), Burnett
patent: 7098504 (2006-08-01), Kawashima et al.
patent: 7245010 (2007-07-01), Powell et al.
patent: 7482651 (2009-01-01), Bhattacharyya
patent: 7485526 (2009-02-01), Mouli et al.
patent: 7554854 (2009-06-01), Osame et al.
patent: 2002/0079533 (2002-06-01), Horiguchi et al.
patent: 2002/0093073 (2002-07-01), Mori et al.
patent: 2002/0175376 (2002-11-01), Ohtani et al.
patent: 2003/0049900 (2003-03-01), Forbes et al.
patent: 2003/0107077 (2003-06-01), Yamazaki et al.
patent: 2004/0043638 (2004-03-01), Nansei et al.
patent: 2004/0104426 (2004-06-01), Forbes et al.
patent: 2004/0119110 (2004-06-01), Park
patent: 2005/0023577 (2005-02-01), Ito
patent: 2005/0095786 (2005-05-01), Chang et al.
patent: 2005/0112820 (2005-05-01), Chen et al.
patent: 2005/0230743 (2005-10-01), Nakagawa et al.
patent: 2006/0003531 (2006-01-01), Chang et al.
patent: 2006/0043463 (2006-03-01), Liu et al.
patent: 2006/0118858 (2006-06-01), Jeon et al.
patent: 2006/0186458 (2006-08-01), Forbes et al.
patent: 2006/0246738 (2006-11-01), Isobe et al.
patent: 2007/0132004 (2007-06-01), Yasuda et al.
patent: 2007/0200167 (2007-08-01), Yamazaki
patent: 2007/0221971 (2007-09-01), Yamazaki et al.
patent: 2007/0221985 (2007-09-01), Yamazaki et al.
patent: 2007/0228449 (2007-10-01), Takano et al.
patent: 2007/0228452 (2007-10-01), Asami
patent: 2007/0228453 (2007-10-01), Yamazaki et al.
patent: 2007/0230254 (2007-10-01), Osame et al.
patent: 2007/0235793 (2007-10-01), Yamazaki et al.
patent: 2007/0235794 (2007-10-01), Yamazaki et al.
patent: 2009/0257283 (2009-10-01), Osame et al.
patent: 0 682 370 (2000-09-01), None
patent: 51-007036 (1976-03-01), None
patent: 52-023532 (1977-06-01), None
patent: 55-015869 (1980-04-01), None
patent: 03-119765 (1991-05-01), None
patent: 06-097454 (1994-04-01), None
patent: 06-244432 (1994-09-01), None
patent: 08-097307 (1996-04-01), None
patent: 2656986 (1997-09-01), None
patent: 10-135357 (1998-05-01), None
patent: 11-040682 (1999-02-01), None
patent: 2000-058685 (2000-02-01), None
patent: 2004-221448 (2004-08-01), None
patent: 2005-347328 (2005-12-01), None
patent: 2006-114905 (2006-04-01), None
European Search Report (Application No. 07005513.2) dated Jul. 10, 2007.
European Search Report (Application No. 07005504.1) dated Apr. 14, 2008.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device having floating gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device having floating gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device having floating gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4224527