Nonvolatile semiconductor memory device having element...

Details Nonvolatile semiconductor memory device having element... Nonvolatile semiconductor memory device having element...

2005-08-09

2005-08-09

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S321000

Reexamination Certificate

active

06927449

ABSTRACT:
A semiconductor device of a selective gate region having a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the first insulating film, and an element isolating region including an element isolating insulating film formed to extend through the first electrode layer and the first insulating film to reach an inner region of the semiconductor layer. The element isolating region isolates an element region and is self-aligned with the first electrode layer, a second insulating film is formed on the first electrode layer and the element isolating region, and an open portion exposes a surface of the first electrode layer and is formed in the second insulating film. A second electrode layer is formed on the second insulating film and the exposed surface of the first electrode layer, the second electrode layer being electrically connected to the first electrode layer via the open portion.

REFERENCES:
patent: 5326999 (1994-07-01), Kim et al.
patent: 5793081 (1998-08-01), Tomioka et al.
patent: 6342715 (2002-01-01), Shimizu et al.
patent: 0 255 159 (1988-02-01), None
patent: 11-026731 (1999-01-01), None
patent: 11-163304 (1999-06-01), None

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