Nonvolatile semiconductor memory device having a word line to wh

Details Nonvolatile semiconductor memory device having a word line to wh Nonvolatile semiconductor memory device having a word line to wh

1995-05-08

1997-02-04

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518527, 36518529, 36518909, G11C 700

Patent

active

056005920

ABSTRACT:
In a flash memory EEPROM, a memory cell MC is formed in a P-type semiconductor substrate. A peripheral transistor TR is formed in an N-type well. Another peripheral transistor TR is formed in a P-type well. The P-type well is by turn formed an N-type well and electrically insulated from the substrate. The substrate is typically provided with a metal back structure and its substrate voltage is set to predetermined voltages respectively for data erasure, data storage and data retrieval with such an arrangement, the level of voltage stress with which the device is loaded during data erasure can be remarkably reduced to allow a down-sizing and an enhanced quality to be realized for the device.

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