Nonvolatile semiconductor memory device for writing...

Details Nonvolatile semiconductor memory device for writing... Nonvolatile semiconductor memory device for writing...

2007-06-25

2010-06-22

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185220

Reexamination Certificate

active

07742334

ABSTRACT:
A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

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