Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S318000
Reexamination Certificate
active
07057230
ABSTRACT:
A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc<tm.
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Fujito Masamichi
Hiraki Mitsuru
Kamigaki Yoshiaki
Katayama Kozo
Matsuzaki Nozomu
Hitachi ULSI Systems Co. Ltd.
Le Thao X.
Miles & Stockbridge P.C.
Pham Long
Renesas Technology Corp.
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