Nonvolatile semiconductor memory device comprising a...

Details Nonvolatile semiconductor memory device comprising a... Nonvolatile semiconductor memory device comprising a...

2006-05-16

2006-05-16

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000

Reexamination Certificate

active

07045840

ABSTRACT:
In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.

REFERENCES:
patent: 5610103 (1997-03-01), Xu et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6762481 (2004-07-01), Liu et al.
Liu, S.Q. et al. (2000). “Electric-Pulse-Induced Reversible Resistance Change Effect in Magnetoresistive Films,”Applied Physics Letters76(19):2749-2751.

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