Nonvolatile semiconductor memory device capable of erasing by a

Details Nonvolatile semiconductor memory device capable of erasing by a Nonvolatile semiconductor memory device capable of erasing by a

1992-09-10

1995-03-28

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Erase

365185, 36518909, 365900, 365 2306, G11C 700

Patent

active

054023823

ABSTRACT:
A nonvolatile semiconductor memory device has a plurality of memory cells, which are arranged in a matrix form having rows and columns and each have floating a gate for holding an information charge, a plurality of bit lines, a plurality of word lines, a plurality of source lines, and a high voltage generator for generating a negative high voltage. The high voltage generator is connected to each word line and has a capacitor to which a predetermined clock is applied in response to a signal for selecting word lines. The semiconductor memory device further comprises an erasing device, which applies the negative high voltage generated by, the high voltage generator to the word line selected by the selection signal in the erasing operation. The erasing device grounds the source line connected to the source of the corresponding memory cell.

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N. Ajika et al., "A 5 Volt Only 16M Bit Flash EEPROM Cell with a Simple Stacked Gate Structure", published Dec. 9, 1990.
Stiegler et al. "A 4Mb 5V-Only Flash EEPROM with Sector Erase," IEEE 1990 Symposium on VLSI Circuits, pp. 103-104.

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