Nonvolatile semiconductor memory device and writing method...

Details Nonvolatile semiconductor memory device and writing method... Nonvolatile semiconductor memory device and writing method...

2008-04-03

2010-12-07

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185120, C365S185130, C365S185170, C365S185230, C365S189030, C365S189140, C365S189160, C365S189170, C365S189050, C365S230060

Reexamination Certificate

active

07848147

ABSTRACT:
A nonvolatile semiconductor memory device and a writing method thereof are provided. The nonvolatile semiconductor memory device includes a cell array, a controller configured to receive input data from an outside source, an address latch unit configured to store a Y-address of the input data and X-addresses respectively corresponding to at least two wordlines, over which the input data is written, based on an address of the input data output from the controller, and a page buffer configured to receive the input data from the controller and temporarily store the input data. The controller writes the data stored in the page buffer over the two wordlines in the cell array based on the at least two X-addresses and the Y-address.

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English Abstract Publication No. 1020000015949, Mar. 2000.

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