Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-11-01
2008-09-23
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189090, C365S204000, C257S299000, C375S374000, C327S144000, C327S148000
Reexamination Certificate
active
07428169
ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array of a plurality of memory cells; and a voltage generating circuit for generating a programming voltage to be applied to the memory cells. The voltage generating circuit includes a first voltage generating unit for generating a negative voltage through a first charge pump; and a second voltage generating unit for generating a positive voltage through a second charge pump. During an accelerated programming operation, the first voltage generating unit increases a pumping efficiency of the first charge pump using an external power supply voltage, and the second voltage generating unit directly outputs the external power supply voltage.
REFERENCES:
patent: 5491657 (1996-02-01), Haddad et al.
patent: 6125056 (2000-09-01), Chen et al.
patent: 6891764 (2005-05-01), Li
patent: 7072238 (2006-07-01), Chae et al.
patent: 7173840 (2007-02-01), Krause et al.
patent: 2006/0186947 (2006-08-01), Lin et al.
patent: 10-247386 (1998-09-01), None
patent: 10-255469 (1998-09-01), None
patent: 2000-049299 (2000-02-01), None
patent: 1020000030505 (2000-06-01), None
patent: 2000-0043892 (2000-07-01), None
patent: 1020030049451 (2003-06-01), None
patent: 1020040002132 (2004-01-01), None
Lee Doo-Sub
Lee Seung-Keun
Dinh Son
Samsung Electronics Co,. Ltd.
Volentine & Whitt, PLLC.
Wendler Eric
LandOfFree
Nonvolatile semiconductor memory device and voltage... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device and voltage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and voltage... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3974270