Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-06-19
2010-11-30
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185180, C365S185240
Reexamination Certificate
active
07843722
ABSTRACT:
A nonvolatile semiconductor memory device and a programming method thereof are provided. The programming method includes first programming a cell among a plurality of adjacent memory cells to the highest threshold voltage distribution corresponding to a data state, and subsequently programming the other adjacent cells to the lower threshold voltage distributions corresponding to second and third data states. The second data state and the third data state may have the second highest threshold voltage distribution and the third highest threshold voltage distribution, respectively, or the third highest threshold voltage distribution and the second highest threshold voltage distribution, respectively.
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F. Chau & Associates LLC
King Douglas
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
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