Nonvolatile semiconductor memory device, and programming...

Details Nonvolatile semiconductor memory device, and programming... Nonvolatile semiconductor memory device, and programming...

2006-01-31

2006-01-31

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S100000, C365S189011, C365S185290

Reexamination Certificate

active

06992920

ABSTRACT:
One end of each variable resistive element, which forms a memory array, in the same row is connected to the same word line and the other end of each variable resistive element in the same column is connected to the same bit line. A first word line voltage is selected and applied to the selected word line, a second word line voltage is selected and applied to the unselected word lines, a first bit line voltage is selected and applied to the selected bit line, and a second bit line voltage is selected and applied to the unselected bit lines. The voltage difference between the first word line voltage and the first bit line voltage is set at a value that is no less than the first voltage difference that changes the resistance value of a variable resistive element, and the voltage difference between the first word line voltage and the second bit line voltage, the voltage difference between the second word line voltage and the first bit line voltage and the voltage difference between the second word line voltage and the second bit line voltage are respectively set at a value that is no greater than the second voltage difference that does not change the resistance value of a variable resistive element.

REFERENCES:
patent: 5544116 (1996-08-01), Chao et al.
patent: 5550770 (1996-08-01), Kuroda
patent: 6204139 (2001-03-01), Liu et al.
patent: 6366497 (2002-04-01), Guliani et al.
patent: 6426907 (2002-07-01), Hoenigschmid
patent: 6804138 (2004-10-01), Thompson et al.
patent: 6888745 (2005-05-01), Ehiro et al.
patent: 2002/0024835 (2002-02-01), Thompson et al.
patent: 2002/0060923 (2002-05-01), Thompson et al.
patent: 2003/0001178 (2003-01-01), Hsu et al.
patent: 2003/0081489 (2003-05-01), Scheuerlein et al.
patent: 2004/0213032 (2004-10-01), Maruyama
European Search Report mailed on Dec. 14, 2004 for EP patent application No. 04 25 3628, 6 pages.
Partial European Search Report mailed on Oct. 18, 2004 for EP patent application No. 04253628.4, 3 pages.
Zhuang, W. W. et al. (2002). “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),” IEDM, Paper No. 7.5IEEE, 4 pages.

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