Nonvolatile semiconductor memory device and programming...

Details Nonvolatile semiconductor memory device and programming... Nonvolatile semiconductor memory device and programming...

2011-07-19

2011-07-19

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185190, C365S185220

Reexamination Certificate

active

07983079

ABSTRACT:
Provided is a program method of a multi-bit flash memory device. The program method includes correspondingly programming multi-bit data into selected memory cells through pluralities of programming loops. In each programming loop, an increment of a programming voltage applied to the selected memory cells is variable in accordance with a result of program-verification to each of data states with the multi-bit data and the program-verification for the data state corresponding to program-pass is skipped if the result of the program-verification to the data state is passed.

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