Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Chaudhari, Chandra (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S758000
Reexamination Certificate
active
06873007
ABSTRACT:
A nonvolatile semiconductor memory device, including: a group of memory cells formed in X and Y directions in and on a semiconductor substrate, the X and Y directions crossing each other, each memory cell including source and drain regions formed in the substrate, a first insulating film formed on a surface of the substrate between the source and drain regions, a floating gate formed on the first insulating film, and a control gate formed above the floating gate via a second insulating film; a plurality of wordlines each connected to the control gates of the memory cells in the X direction; a plurality of sub-bit lines, each sub-bit line connected to a predetermined number of source and drain regions of the memory cells in the Y direction; a plurality of main-bit lines extending in the Y direction, each main-bit line being connected to the sub-bit line in the Y direction, and a plurality of dielectric layers laminated on the sub-bit lines, wherein each main-bit line is formed on any one of the plurality of dielectric layers, each main-bit line being connected to the corresponding sub-bit line via a conductive member penetrating through the dielectric layer under the main-bit line, and adjacent two of the main-bit lines are located on different dielectric layers.
REFERENCES:
patent: 4825271 (1989-04-01), Tanaka et al.
patent: 5883406 (1999-03-01), Nishizawa
patent: 6204529 (2001-03-01), Lung et al.
patent: 6437424 (2002-08-01), Noma et al.
patent: 09-092739 (1997-04-01), None
Sugita Yasuhiro
Yamauchi Yoshimitsu
Chaudhari Chandra
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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