Nonvolatile semiconductor memory device and one-time...

Details Nonvolatile semiconductor memory device and one-time... Nonvolatile semiconductor memory device and one-time...

2006-08-01

2006-08-01

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Data security

C365S225700, C365S230060

Reexamination Certificate

active

07085158

ABSTRACT:
A nonvolatile semiconductor memory device is provided, comprising a nonvolatile memory cell array which has a one-time programming region accessed in response to a first decoding signal and a normal region accessed in response to a second decoding signal. The device performs a read operation and a write operation. The device further comprises (a) a data write circuit writing data in the nonvolatile memory cell array in response to a write enable signal during the write operation; (b) a data read circuit reading data output from the nonvolatile memory cell array in response to a sense amplifier enable signal during the read operation; and (c) a control means activating the sense amplifier enable signal when the first decoding signal is generated and comparing data output from the data read circuit to generate the write enable signal during the write operation.

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